BF 5030 E6327

BF5030... Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and 3 VHF-tuners with AGC function 2 4 • Supporting 5 V operations and 1 power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance • Very good cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF5030 SOT143 1=S 2=D 3=G2 4=G1 - - KXs BF5030R SOT143R 1=D 2=S 3=G1 4=G2 - - KXs BF5030W SOT343 1=D 2=S 3=G1 4=G2 - - KXs 1 Marking 2009-05-05 BF5030... Maximum Ratings Parameter Symbol Value Drain-source voltage VDS Continuous drain current ID 25 mA Gate 1/ gate 2-source current IG1S, IG2S ±1 mA Gate 1/ gate 2-source voltage VG1S, VG2S ±6 V Total power dissipation Ptot 8 Unit V mW TS ≤ 94 °C, BF5030W 200 TS ≤ 76 °C, BF5030, BF5030R 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 °C Thermal Resistance Parameter Symbol Channel - soldering point 1) Rthchs Value K/W BF5030W ≤ 280 BF5030, BF5030R ≤ 370 1For Unit calculation of RthJA please refer to Application Note Thermal Resistance 2 2009-05-05 BF5030... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)DS 12 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 +IG2SS - - 50 VDS = 3 V, VG1S = 0 , VG2S = 3 V - - 100 VDS = 5 V, VG1S = 0 , VG2S = 4 V - - 100 DC Characteristics Drain-source breakdown voltage V ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current nA VG1S = 6 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current Drain-source current IDSS mA IDSX VDS = 3 V, VG2S = 3 V, RG1 = 82 kΩ - 13 - VDS = 5 V, VG2S = 4 V, RG1 = 180 kΩ - 13 - Gate1-source pinch-off voltage VG1S(p) V VDS = 3 V, VG2S = 3 V, ID = 20 µA - 0.7 - VDS = 5 V, VG2S = 4 V, ID = 20 µA - 0.7 - VDS = 3 V, VG1S = 3 V, ID = 20 µA - 0.7 - VDS = 5 V, VG1S = 4 V, ID = 20 µA - 0.7 - Gate2-source pinch-off voltage VG2S(p) 3 2009-05-05 BF5030... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics - (verified by random sampling) Forward transconductance gfs mS VDS = 3 V, I D = 10 mA, VG2S = 3 V - 41 - VDS = 5 V, I D = 10 mA, VG2S = 4 V - 41 - Gate1 input capacitance pF Cg1ss VDS = 3 V, I D = 10 mA, VG2S = 3 V - 2.7 - VDS = 5 V, I D = 10 mA, VG2S = 4 V - 2.8 - VDS = 3 V, I D = 10 mA, VG2S = 3 V - 1.6 - VDS = 5 V, I D = 10 mA, VG2S = 4 V - 1.5 - Output capacitance Cdss Power gain Gp dB VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 800 MHz - 24 - VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 45 MHz - 34 - VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz - 24 - VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz - 34 - Noise figure dB F VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 800 MHz - 1.3 - VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 45 MHz - 0.9 - VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz - 1.3 - VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz - 0.9 - VDS = 3 V, V G2S = 3...0 V , f = 800 MHz 45 50 - VDS = 5 V, V G2S = 4...0 V , f = 800 MHz 45 50 - ∆G p Gain control range Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod AGC = 0 dB 90 94 - AGC = 10 dB - 92 - AGC = 40 dB 96 98 - 4 2009-05-05 BF5030... Total power dissipation Ptot = ƒ(TS) BF5030W Total power dissipation Ptot = ƒ(TS) BF5030, BF5030R 220 220 mW 180 180 160 160 P tot P tot mA 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 75 90 105 120 °C TS Drain current ID = ƒ(IG1)  VDS = 3 V, VG2S = 3 V Output characteristics ID = ƒ(V DS) VG1S = Parameter … VDS = 5 V, VG2S = 4 V  VDS = 3 V, … VDS = 5 V 35 22 mA 1.4V mA 18 1.4V 16 25 ID ID 1.3V 20 14 1.3V 12 1.2V 10 15 1.2V 8 10 6 1V 4 5 1V 2 0 0 150 TS 10 20 30 µA 0 0 50 IG1 2 4 6 8 V 12 VDS 5 2009-05-05 BF5030... Gate 1 current IG1 = ƒ(V G1S) Gate 1 forward transconductance VG2S = Parameter g fs = ƒ(ID),V G2S = Parameter  VDS = 3 V, … VDS = 5 V  VDS = 3 V, … VDS = 5 V 200 60 3V mS 50 4V µA 4V 3V 2.5V I G1 45 40 Gfs 3.5V 3V 100 2V 30 3V 2V 25 2.5V 20 2.5V 50 35 15 2V 2V 10 1.5V 1.5V 5 0 0 0.5 1 1.5 V 2 0 0 3 5 10 15 20 25 mA 30 VG1S Drain current ID = ƒ(VG1S) ID VG2S = Parameter Drain current ID = ƒ(V GG)  VDS = 3 V, VG2S = 3 V, Rg1 = 82 kΩ  VDS = 3 V, … VDS = 5 V … VDS = 5 V, VG2S = 4 V, Rg1 = 180 kΩ 32 14 4V mA 3V mA 3V 2V 24 10 2.5V 20 ID ID 40 8 16 1.5V 6 1.5V 12 4 8 2 1V 4 1V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V 0 0 1.8 VG1S 1 2 3 V 5 VGG 6 2009-05-05 BF5030... Drain current ID = ƒ(VGG) Power gain Gps = ƒ (VG2S), f = 45 MHz RG1 = Parameter in kΩ  VDS = 3 V, VG2S = 3 V, Rg1 = 82 kΩ  VDS = 3 V, … VDS = 5 V … VDS = 5 V, VG2S = 4 V, Rg1 = 180 kΩ 26 mA 40 100k 68k dB 22 120k 20 82k 16 100k 14 120k G ps ID 18 150k 180k 20 10 12 10 0 8 6 -10 4 2 0 0 1 2 3 V 4 -20 0 6 1 2 V 4 VG2S VGG=VDS Noise figure F = ƒ (VG2S), f = 45 MHz Noise figure F = ƒ (VG2S), f = 800 MHz  VDS = 3 V, VG2S = 3 V, Rg1 = 82 kΩ  VDS = 3 V, VG2S = 3 V, Rg1 = 82 kΩ … VDS = 5 V, VG2S = 4 V, Rg1 = 180 kΩ … VDS = 5 V, VG2S = 4 V, Rg1 = 180 kΩ 8 8 F dB F dB 4 4 2 2 0 0 1 2 V 0 0 4 VG2S 1 2 V 4 VG2S 7 2009-05-05 BF5030... Power gain Gps = ƒ (VG2S), f = 800 MHz Crossmodulation Vunw = (AGC)  VDS = 3 V, VG2S = 3 V, Rg1 = 82 kΩ  VDS = 3 V, VG2S = 3 V, Rg1 = 82 kΩ … VDS = 5 V, VG2S = 4 V, Rg1 = 180 kΩ … VDS = 5 V, VG2S = 4 V, Rg1 = 180 kΩ 30 115 dB dBµV 20 V unw Gps 15 10 5 105 100 0 95 -5 -10 90 -15 -20 0 0.5 1 1.5 2 2.5 3 V 85 0 4 5 10 15 20 25 30 35 40 dB 50 AGC VG2 8 2009-05-05 BF5030... Crossmodulation test circuit VAGC VDS 4n7 R1 10kΩ 2.2 uH 4n7 4n7 RL 50Ω RGEN 50Ω 4n7 50 Ω RG1 VGG Semibiased 9 2009-05-05 Package SOT143 BF5030... 2 0.1 MAX. 10˚ MAX. 1 1 ±0.1 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 A 5 0...8˚ 0.2 M A 0.25 M B 1.7 0.08...0.1 1.3 ±0.1 3 2.4 ±0.15 4 B 10˚ MAX. 2.9 ±0.1 1.9 0.15 MIN. Package Outline Foot Print 1.2 0.8 0.9 1.1 0.9 0.8 1.2 0.8 0.8 Marking Layout (Example) RF s 56 Manufacturer Pin 1 2005, June Date code (YM) BFP181 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.6 8 4 Pin 1 3.15 1.15 10 2009-05-05 Package SOT143R BF5030... Package Outline 2 0.2 0.08...0.15 A +0.1 0.8 -0.05 0.4 +0.1 -0.05 0˚... 8˚ 1.7 0.25 10˚ MAX. 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1.9 4 1 ±0.1 0.15 MIN. 2.9 ±0.1 M 0.2 M A B Foot Print 1.2 0.8 0.9 1.1 0.9 0.8 0.8 0.8 1.2 Marking Layout (Example) Reverse bar 2005, June Date code (YM) Pin 1 Manufacturer BFP181R Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.6 8 4 Pin 1 3.15 1.15 11 2009-05-05 Package SOT343 BF5030... Package Outline 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 12 2009-05-05 BF5030... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 13 2009-05-05